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Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M393B5170GB0-CK0 4GB
Compare
Micron Technology 8ATF1G64HZ-3G2R1 8GB vs Samsung M393B5170GB0-CK0 4GB
Overall score
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Overall score
Samsung M393B5170GB0-CK0 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Report a bug
Faster reading speed, GB/s
15.8
10.8
Average value in the tests
Faster write speed, GB/s
12.5
8.7
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2% higher bandwidth
Reasons to consider
Samsung M393B5170GB0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
45
51
Around -13% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M393B5170GB0-CK0 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
51
45
Read speed, GB/s
15.8
10.8
Write speed, GB/s
12.5
8.7
Memory bandwidth, mbps
25600
12800
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2570
2237
Micron Technology 8ATF1G64HZ-3G2R1 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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