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Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M393B5170GB0-CK0 4GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB vs Samsung M393B5170GB0-CK0 4GB

Overall score
star star star star star
Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Overall score
star star star star star
Samsung M393B5170GB0-CK0 4GB

Samsung M393B5170GB0-CK0 4GB

Differences Specifications Comments

Differences

Micron Technology 8ATF1G64HZ-3G2R1 8GB Reasons to consider
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Report a bug
  • Faster reading speed, GB/s
    15.8 left arrow 10.8
    Average value in the tests
  • Faster write speed, GB/s
    12.5 left arrow 8.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2% higher bandwidth
Samsung M393B5170GB0-CK0 4GB Reasons to consider
Samsung M393B5170GB0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    45 left arrow 51
    Around -13% lower latency

Specifications

Complete list of technical specifications
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M393B5170GB0-CK0 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    51 left arrow 45
  • Read speed, GB/s
    15.8 left arrow 10.8
  • Write speed, GB/s
    12.5 left arrow 8.7
  • Memory bandwidth, mbps
    25600 left arrow 12800
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2570 left arrow 2237

Micron Technology 8ATF1G64HZ-3G2R1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393B5170GB0-CK0 4GB RAM comparisons

Samsung M393B1K70DH0-CK0 8GB
Corsair CMK64GX4M8X4133C19 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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