RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Faster reading speed, GB/s
15.7
11.7
Average value in the tests
Faster write speed, GB/s
13.3
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
11.7
15.7
Write speed, GB/s
8.4
13.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1578
3318
Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM comparisons
Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Ramaxel Technology RMR5030MM58E8F1600 2GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Samsung M378B1G73QH0-CK0 8GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
A-DATA Technology AD73I1C1674EV 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Ramaxel Technology RMR5030MM58E8F1600 2GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Kingston KVR16N11/8-SP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2400C15-8GIS 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 99U5700-032.A00G 16GB
G Skill Intl F3-2133C9-4GAB 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMW16GX4M2Z3200C16 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CM4X16GE2400C16K4 16GB
Kingston K1N7HK-ELC 2GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Report a bug
×
Bug description
Source link