PNY Electronics PNY 2GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

PNY Electronics PNY 2GB vs Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Overall score
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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
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Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 31
    Around 13% lower latency
  • Faster reading speed, GB/s
    21.4 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    16.2 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 31
  • Read speed, GB/s
    13.8 left arrow 21.4
  • Write speed, GB/s
    8.4 left arrow 16.2
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 3809
RAM Latency Calculator
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