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PNY Electronics PNY 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB

PNY Electronics PNY 2GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 62
    Around 56% lower latency
  • Faster write speed, GB/s
    8.4 left arrow 7.0
    Average value in the tests
Samsung V-GeN D4S4GL30A16TS5 4GB Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
  • Faster reading speed, GB/s
    16.7 left arrow 13.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 62
  • Read speed, GB/s
    13.8 left arrow 16.7
  • Write speed, GB/s
    8.4 left arrow 7.0
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 1808

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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