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PNY Electronics PNY 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Compare
PNY Electronics PNY 2GB vs Samsung V-GeN D4S4GL30A16TS5 4GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung V-GeN D4S4GL30A16TS5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
62
Around 56% lower latency
Faster write speed, GB/s
8.4
7.0
Average value in the tests
Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
Faster reading speed, GB/s
16.7
13.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
62
Read speed, GB/s
13.8
16.7
Write speed, GB/s
8.4
7.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
1808
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
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Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons
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Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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