RAM comparison PNY Electronics PNY 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

PNY Electronics PNY 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

PNY Electronics PNY 2GB

Overall score

Differences Specifications Comments

Reasons to consider
PNY Electronics PNY 2GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Faster reading speed, GB/s

20.5 13.8

Average value in the tests
Faster write speed, GB/s

15.5 8.4

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Complete list of technical specifications

PNY Electronics PNY 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2274 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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