RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB4GB681CA3-16IC 4GB
SK Hynix HMT351U6BFR8C-H9 4GB
Compare
Ramos Technology EWB4GB681CA3-16IC 4GB vs SK Hynix HMT351U6BFR8C-H9 4GB
Overall score
Ramos Technology EWB4GB681CA3-16IC 4GB
Overall score
SK Hynix HMT351U6BFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB4GB681CA3-16IC 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
41
Around 39% lower latency
Faster reading speed, GB/s
15.4
13.9
Average value in the tests
Faster write speed, GB/s
8.5
8.4
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
SK Hynix HMT351U6BFR8C-H9 4GB
Report a bug
Specifications
Complete list of technical specifications
Ramos Technology EWB4GB681CA3-16IC 4GB
SK Hynix HMT351U6BFR8C-H9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
25
41
Read speed, GB/s
15.4
13.9
Write speed, GB/s
8.5
8.4
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2457
2116
Ramos Technology EWB4GB681CA3-16IC 4GB RAM comparisons
Patriot Memory (PDP Systems) PSD34G133381 4GB
SK Hynix HMT351U6BFR8C-H9 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA82GS6JJR8N-VK 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3200C14-32GTRS 32GB
Kingston KHX1600C9S3L/4G 4GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
SK Hynix HMT351S6CFR8C-H9 4GB
AMD R334G1339U2S 4GB
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
G Skill Intl F4-4000C19-8GTZKW 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Samsung M471A5244CB0-CTD 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2666C19-16GRS 16GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C17-8GVK 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Report a bug
×
Bug description
Source link