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Ramos Technology EWB4GB681CA3-16IC 4GB
SK Hynix HMT351U6BFR8C-H9 4GB

Ramos Technology EWB4GB681CA3-16IC 4GB vs SK Hynix HMT351U6BFR8C-H9 4GB

总分
star star star star star
Ramos Technology EWB4GB681CA3-16IC 4GB

Ramos Technology EWB4GB681CA3-16IC 4GB

总分
star star star star star
SK Hynix HMT351U6BFR8C-H9 4GB

SK Hynix HMT351U6BFR8C-H9 4GB

差异 规格 评论

差异

Ramos Technology EWB4GB681CA3-16IC 4GB 需要考虑的原因
Ramos Technology EWB4GB681CA3-16IC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 41
    左右 39% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
SK Hynix HMT351U6BFR8C-H9 4GB 需要考虑的原因
SK Hynix HMT351U6BFR8C-H9 4GB
报告一个错误

规格

完整的技术规格清单
Ramos Technology EWB4GB681CA3-16IC 4GB
SK Hynix HMT351U6BFR8C-H9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    25 left arrow 41
  • 读取速度，GB/s
    15.4 left arrow 13.9
  • 写入速度，GB/s
    8.5 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2457 left arrow 2116

Ramos Technology EWB4GB681CA3-16IC 4GB RAM的比较

Patriot Memory (PDP Systems) PSD34G133381 4GB

SK Hynix HMT351U6BFR8C-H9 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramos Technology EWB4GB681CA3-16IC 4GB
Ramos Technology EWB4GB681CA3-16IC 4GB
SK Hynix HMT351U6BFR8C-H9 4GB
SK Hynix HMT351U6BFR8C-H9 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston CBD26D4U9S8MH-8 8GB
Kingston CBD26D4U9S8MH-8 8GB
内存RAM
Kingston 99U5458-002.A00LF 2GB
Kingston 99U5458-002.A00LF 2GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK4GX4M1A2400C16 4GB
内存RAM