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Samsung 1600 CL10 Series 8GB
Inmos + 256MB
Compare
Samsung 1600 CL10 Series 8GB vs Inmos + 256MB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
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Below the latency in the PassMark tests, ns
25
30
Around 17% lower latency
Faster reading speed, GB/s
16.1
11.5
Average value in the tests
Faster write speed, GB/s
10.1
9.1
Average value in the tests
Reasons to consider
Inmos + 256MB
Report a bug
Higher memory bandwidth, mbps
16800
12800
Around 1.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Inmos + 256MB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
30
Read speed, GB/s
16.1
11.5
Write speed, GB/s
10.1
9.1
Memory bandwidth, mbps
12800
16800
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
no data
Ranking PassMark (The more the better)
2764
2318
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Inmos + 256MB RAM comparisons
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RAM Latency Calculator
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RAM 2
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