RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung 1600 CL10 Series 8GB
Inmos + 256MB

Samsung 1600 CL10 Series 8GB vs Inmos + 256MB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Inmos + 256MB

Inmos + 256MB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 30
    Around 17% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 11.5
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 9.1
    Average value in the tests
Inmos + 256MB Reasons to consider
Inmos + 256MB
Report a bug
  • Higher memory bandwidth, mbps
    16800 left arrow 12800
    Around 1.31 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Inmos + 256MB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 30
  • Read speed, GB/s
    16.1 left arrow 11.5
  • Write speed, GB/s
    10.1 left arrow 9.1
  • Memory bandwidth, mbps
    12800 left arrow 16800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2764 left arrow 2318

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Inmos + 256MB RAM comparisons

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons