RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Overall score
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 15.6
    Average value in the tests
  • Faster write speed, GB/s
    2,123.3 left arrow 12.1
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 59
    Around -146% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    59 left arrow 24
  • Read speed, GB/s
    4,833.8 left arrow 15.6
  • Write speed, GB/s
    2,123.3 left arrow 12.1
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    731 left arrow 2852

Samsung M3 78T2863EHS-CF7 1GB RAM comparisons

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Memory RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Memory RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Memory RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9965662-004.A00G 16GB
Kingston 9965662-004.A00G 16GB
Memory RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Memory RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
Memory RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Memory RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
Memory RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Memory RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
Memory RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Memory RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Memory RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Memory RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Memory RAM