RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,123.3
12.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
59
Around -146% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
24
Read speed, GB/s
4,833.8
15.6
Write speed, GB/s
2,123.3
12.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2852
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Kingston 9905403-061.A00LF 2GB
Apacer Technology GD2.1527WT.001 8GB
Kingston 9905471-006.A00LF 4GB
Kingston 9965596-023.B01G 8GB
A-DATA Technology ADOVE1A0834E 1GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3600C14-16GTZN 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Nanya Technology NT512T64UH8B0FN-3C 512MB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-2800C16-8GRR 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Transcend Information TS512MLH64V1H 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905678-041.A00G 4GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Kingston XW21KG-MIE2 8GB
Team Group Inc. Team-Elite-1333 4GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
Report a bug
×
Bug description
Source link