Samsung M3 78T5663EH3-CF7 2GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Samsung M3 78T5663EH3-CF7 2GB vs Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Overall score
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Overall score
star star star star star
Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Differences

  • Faster write speed, GB/s
    2,451.8 left arrow 2,366.2
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    61 left arrow 65
    Around -7% lower latency
  • Faster reading speed, GB/s
    4 left arrow 4
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M3 78T5663EH3-CF7 2GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    65 left arrow 61
  • Read speed, GB/s
    4,605.9 left arrow 4,614.7
  • Write speed, GB/s
    2,451.8 left arrow 2,366.2
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    878 left arrow 772
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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