RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17.6
Average value in the tests
Faster write speed, GB/s
2,622.0
13.9
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Report a bug
Below the latency in the PassMark tests, ns
30
77
Around -157% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
30
Read speed, GB/s
3,405.2
17.6
Write speed, GB/s
2,622.0
13.9
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
3473
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB RAM comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C18 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston 99U5713-001.A00G 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965596-002.B00G 4GB
Samsung M393B1K70CH0-CH9 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Samsung M471B5173EB0-YK0 4GB
Kingston CBD26D4U9S8ME-8 8GB
A-DATA Technology DDR4 2666 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMT32GX4M2C3466C16 16GB
Report a bug
×
Bug description
Source link