RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
16.9
Average value in the tests
Faster write speed, GB/s
2,622.0
12.4
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
77
Around -148% lower latency
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
31
Read speed, GB/s
3,405.2
16.9
Write speed, GB/s
2,622.0
12.4
Memory bandwidth, mbps
5300
no data
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
, 1.20000005, CAS Supported:
Timings / Clock speed
5-5-5-15 / 667 MHz
no data
Ranking PassMark (The more the better)
763
3043
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB RAM comparisons
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CM4B16G1J2400A16K2-O 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-8GIS 8GB
Kingston 99U5428-063.A00LF 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Samsung M393B1K70QB0-CK0 8GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston ACR26D4U9S1KA-4 4GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C15-8GVR 8GB
Samsung M393B2G70BH0-CH9 16GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Samsung M471B1G73DB0-YK0 8GB
Apacer Technology 78.B1GM3.AF00B 4GB
Kingston KVR800D2N6/2G 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Kingston KHX2800C14D4/8GX 8GB
Kingston 9905702-204.A00G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965604-008.D00G 16GB
Report a bug
×
Bug description
Source link