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Samsung M378A1G43DB0-CPB 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around -50% lower latency
Faster reading speed, GB/s
15.6
15
Average value in the tests
Faster write speed, GB/s
12.1
10.3
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
24
Read speed, GB/s
15.0
15.6
Write speed, GB/s
10.3
12.1
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2569
2852
Samsung M378A1G43DB0-CPB 8GB RAM comparisons
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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