RAM comparison Samsung M378A1G43DB0-CPB 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Samsung M378A1G43DB0-CPB 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Overall score

Samsung M378A1G43DB0-CPB 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A1G43DB0-CPB 8GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Below the latency in the PassMark tests, ns

24 36

Around -50% lower latency
Faster reading speed, GB/s

15.6 15

Average value in the tests
Faster write speed, GB/s

12.1 10.3

Average value in the tests
Higher memory bandwidth, mbps

19200 17000

Around 1.13 higher bandwidth

Complete list of technical specifications

Samsung M378A1G43DB0-CPB 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Main characteristics

Other

Description

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2569 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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