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Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Team Group Inc. ECC-DDR3-1600 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Team Group Inc. ECC-DDR3-1600 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
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Below the latency in the PassMark tests, ns
33
69
Around 52% lower latency
Faster reading speed, GB/s
17.6
5.6
Average value in the tests
Faster write speed, GB/s
12.0
3.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2% higher bandwidth
Reasons to consider
Team Group Inc. ECC-DDR3-1600 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
33
69
Read speed, GB/s
17.6
5.6
Write speed, GB/s
12.0
3.0
Memory bandwidth, mbps
25600
12800
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2910
912
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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