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Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB

Samsung M378A1K43EB2-CWE 8GB vs Team Group Inc. ECC-DDR3-1600 4GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
Team Group Inc. ECC-DDR3-1600 4GB

Team Group Inc. ECC-DDR3-1600 4GB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 69
    Around 52% lower latency
  • Faster reading speed, GB/s
    17.6 left arrow 5.6
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 3.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2% higher bandwidth
Team Group Inc. ECC-DDR3-1600 4GB Reasons to consider
Team Group Inc. ECC-DDR3-1600 4GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    33 left arrow 69
  • Read speed, GB/s
    17.6 left arrow 5.6
  • Write speed, GB/s
    12.0 left arrow 3.0
  • Memory bandwidth, mbps
    25600 left arrow 12800
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2910 left arrow 912

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Team Group Inc. ECC-DDR3-1600 4GB RAM comparisons

G Skill Intl F4-4400C19-8GTZKK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
RAM Latency Calculator
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