RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Team Group Inc. ECC-DDR3-1600 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Team Group Inc. ECC-DDR3-1600 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
69
Around 52% lower latency
Faster reading speed, GB/s
17.6
5.6
Average value in the tests
Faster write speed, GB/s
12.0
3.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2% higher bandwidth
Reasons to consider
Team Group Inc. ECC-DDR3-1600 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
33
69
Read speed, GB/s
17.6
5.6
Write speed, GB/s
12.0
3.0
Memory bandwidth, mbps
25600
12800
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2910
912
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Team Group Inc. ECC-DDR3-1600 4GB RAM comparisons
G Skill Intl F4-3200C14-8GTZR 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Samsung M3 78T2863EHS-CF7 1GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Apacer Technology GD2.0927WH.001 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965596-019.B01G 4GB
Samsung M378A1K43EB2-CWE 8GB
Team Group Inc. ECC-DDR3-1600 4GB
SK Hynix HMT351S6CFR8A-PB 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A1K43BB1-CTD 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2666C19-8GIS 8GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-4600C18-8GTZR 8GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMK64GX4M4C3000C15 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Report a bug
×
Bug description
Source link