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Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Samsung M378B5673EH1-CF8 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

Overall score
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 31
    Around 10% lower latency
Micron Technology 8ATF1G64AZ-3G2R1 8GB Reasons to consider
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Report a bug
  • Faster reading speed, GB/s
    16.9 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    12.4 left arrow 7.5
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 31
  • Read speed, GB/s
    12.7 left arrow 16.9
  • Write speed, GB/s
    7.5 left arrow 12.4
  • Memory bandwidth, mbps
    8500 left arrow no data
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow , 1.20000005, CAS Supported:
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow no data
  • Ranking PassMark (The more the better)
    1988 left arrow 3043

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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