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Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Reasons to consider
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Report a bug
Faster reading speed, GB/s
16.9
12.7
Average value in the tests
Faster write speed, GB/s
12.4
7.5
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
12.7
16.9
Write speed, GB/s
7.5
12.4
Memory bandwidth, mbps
8500
no data
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
, 1.20000005, CAS Supported:
Timings / Clock speed
7-7-7-20 / 1066 MHz
no data
Ranking PassMark (The more the better)
1988
3043
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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