RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
16
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
56
Around -133% lower latency
Faster write speed, GB/s
12.5
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
24
Read speed, GB/s
4,387.7
16.0
Write speed, GB/s
1,813.5
12.5
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
693
2925
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Corsair CMG64GX4M2D3600C18 32GB
Samsung M471B5673FH0-CF8 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3600C16-32GTZN 32GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
A-DATA Technology DDR2 800G 2GB
Kingston KHX2666C15/16GX 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK64GX4M8A2133C13 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-3600C17-8GTRS 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston HP32D4U8S8ME-8X 8GB
Samsung M378T5663QZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Kingston 99U5474-022.A00LF 2GB
Kingston KHX2133C13D4/8GX 8GB
Report a bug
×
Bug description
Source link