Samsung M393B1K70CH0-YH9 8GB
Inmos + 256MB

Samsung M393B1K70CH0-YH9 8GB vs Inmos + 256MB

Overall score
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Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Overall score
star star star star star
Inmos + 256MB

Inmos + 256MB

Differences

Inmos + 256MB Reasons to consider
Inmos + 256MB
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  • Below the latency in the PassMark tests, ns
    30 left arrow 49
    Around -63% lower latency
  • Faster reading speed, GB/s
    11.5 left arrow 10.1
    Average value in the tests
  • Faster write speed, GB/s
    9.1 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    16800 left arrow 10600
    Around 1.58 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
Inmos + 256MB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 30
  • Read speed, GB/s
    10.1 left arrow 11.5
  • Write speed, GB/s
    7.8 left arrow 9.1
  • Memory bandwidth, mbps
    10600 left arrow 16800
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2070 left arrow 2318
RAM Latency Calculator
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