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Samsung M395T2863QZ4-CF76 1GB
Inmos + 256MB
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Samsung M395T2863QZ4-CF76 1GB vs Inmos + 256MB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
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Faster reading speed, GB/s
3
11.5
Average value in the tests
Reasons to consider
Inmos + 256MB
Report a bug
Below the latency in the PassMark tests, ns
30
104
Around -247% lower latency
Faster write speed, GB/s
9.1
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
16800
6400
Around 2.63 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Inmos + 256MB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
30
Read speed, GB/s
3,192.0
11.5
Write speed, GB/s
2,404.5
9.1
Memory bandwidth, mbps
6400
16800
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
no data
no data
Ranking PassMark (The more the better)
786
2318
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
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Inmos + 256MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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