RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A2G43BB2-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Compare
Samsung M471A2G43BB2-CWE 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
Samsung M471A2G43BB2-CWE 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A2G43BB2-CWE 16GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
60
Around -131% lower latency
Faster reading speed, GB/s
16.8
14.9
Average value in the tests
Faster write speed, GB/s
13.5
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A2G43BB2-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
60
26
Read speed, GB/s
14.9
16.8
Write speed, GB/s
12.0
13.5
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2511
2880
Samsung M471A2G43BB2-CWE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM comparisons
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A2G43BB2-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Samsung M378B5673FH0-CH9 2GB
Kingston KVR24N17S8/4 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Samsung M378B5773DH0-CH9 2GB
Golden Empire CL17-17-17 D4-2400 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Kingston KVR800D2N6/2G 2GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK32GX4M2C3000C16 16GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CM4X8GD3000C15K4 8GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-4400C17-8GVK 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Report a bug
×
Bug description
Source link