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Samsung M471A5143SB1-CRC 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Compare
Samsung M471A5143SB1-CRC 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Overall score
Samsung M471A5143SB1-CRC 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5143SB1-CRC 4GB
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Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Faster reading speed, GB/s
14.9
11.5
Average value in the tests
Faster write speed, GB/s
10.6
7.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A5143SB1-CRC 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
24
32
Read speed, GB/s
14.9
11.5
Write speed, GB/s
10.6
7.4
Memory bandwidth, mbps
19200
12800
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2196
1919
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
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