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Samsung M471A5143SB1-CRC 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Compare
Samsung M471A5143SB1-CRC 4GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung M471A5143SB1-CRC 4GB
Overall score
Micron Technology 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5143SB1-CRC 4GB
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Below the latency in the PassMark tests, ns
24
43
Around 44% lower latency
Faster reading speed, GB/s
14.9
12.2
Average value in the tests
Faster write speed, GB/s
10.6
9.7
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 8ATF51264AZ-2G1A1 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M471A5143SB1-CRC 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
43
Read speed, GB/s
14.9
12.2
Write speed, GB/s
10.6
9.7
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2196
2501
Samsung M471A5143SB1-CRC 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Micron Technology 8ATF51264AZ-2G1A1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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