Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Overall score
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Differences

  • Faster reading speed, GB/s
    12.3 left arrow 8.8
    Average value in the tests
  • Faster write speed, GB/s
    8.0 left arrow 5.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
  • Below the latency in the PassMark tests, ns
    30 left arrow 45
    Around -50% lower latency

Specifications

Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    45 left arrow 30
  • Read speed, GB/s
    12.3 left arrow 8.8
  • Write speed, GB/s
    8.0 left arrow 5.6
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1992 left arrow 1344
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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