SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
star star star star star
SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 15.6
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    71 left arrow 117
    Around -65% lower latency
  • Faster write speed, GB/s
    6.4 left arrow 2,303.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    117 left arrow 71
  • Read speed, GB/s
    3,094.8 left arrow 15.6
  • Write speed, GB/s
    2,303.7 left arrow 6.4
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    784 left arrow 1650
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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