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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5244CB0-CWE 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M378A5244CB0-CWE 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Samsung M378A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Faster reading speed, GB/s
3
16.7
Average value in the tests
Reasons to consider
Samsung M378A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
63
Around -85% lower latency
Faster write speed, GB/s
12.3
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
34
Read speed, GB/s
3,231.0
16.7
Write speed, GB/s
1,447.3
12.3
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
478
2584
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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