RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
59
Around 56% lower latency
Faster write speed, GB/s
8.4
7.6
Average value in the tests
Reasons to consider
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Report a bug
Faster reading speed, GB/s
17.3
13.2
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
59
Read speed, GB/s
13.2
17.3
Write speed, GB/s
8.4
7.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2070
1954
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2400C15-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Samsung M393B1K70CH0-YH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
G Skill Intl F5-5600J4040C16G 16GB
Samsung M471A2K43DB1-CTD 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK16GX4M2Z3600C14 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M378A2K43DB1-CVF 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
AMD R534G1601U1S-UO 4GB
Apacer Technology 78.C1GM3.C7W0B 8GB
Kingston 9905403-447.A00LF 4GB
Gloway International (HK) STK2133C15-8GB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Corsair CMWX8GD3000C15W4 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905700-025.A00G 8GB
Report a bug
×
Bug description
Source link