Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Samsung M393B1K70DH0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB vs Samsung M393B1K70DH0-CK0 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Overall score
star star star star star
Samsung M393B1K70DH0-CK0 8GB

Samsung M393B1K70DH0-CK0 8GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 49
    Around 27% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33% higher bandwidth
  • Faster reading speed, GB/s
    10.3 left arrow 9.1
    Average value in the tests
  • Faster write speed, GB/s
    8.2 left arrow 7.9
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Samsung M393B1K70DH0-CK0 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    36 left arrow 49
  • Read speed, GB/s
    9.1 left arrow 10.3
  • Write speed, GB/s
    7.9 left arrow 8.2
  • Memory bandwidth, mbps
    17000 left arrow 12800
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2090 left arrow 2230
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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