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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Samsung M393B1K70DH0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB vs Samsung M393B1K70DH0-CK0 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

总分
star star star star star
Samsung M393B1K70DH0-CK0 8GB

Samsung M393B1K70DH0-CK0 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 49
    左右 27% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33% 更高的带宽
Samsung M393B1K70DH0-CK0 8GB 需要考虑的原因
Samsung M393B1K70DH0-CK0 8GB
报告一个错误
  • 更快的读取速度，GB/s
    10.3 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.9
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Samsung M393B1K70DH0-CK0 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    36 left arrow 49
  • 读取速度，GB/s
    9.1 left arrow 10.3
  • 写入速度，GB/s
    7.9 left arrow 8.2
  • 内存带宽，mbps
    17000 left arrow 12800
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2090 left arrow 2230

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905471-002.A00LF 2GB

Samsung M393B1K70DH0-CK0 8GB RAM的比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M471B1G73DB0-YK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905702-400.A00G 8GB
Kingston 9905702-400.A00G 8GB
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Samsung M393B1K70CH0-CH9 8GB
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