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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Samsung M471A1K43DB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB vs Samsung M471A1K43DB1-CTD 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Overall score
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 35
    Around 23% lower latency
Samsung M471A1K43DB1-CTD 8GB Reasons to consider
Samsung M471A1K43DB1-CTD 8GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 15.3
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 11.2
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Samsung M471A1K43DB1-CTD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 35
  • Read speed, GB/s
    15.3 left arrow 15.7
  • Write speed, GB/s
    11.2 left arrow 11.8
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2545 left arrow 2767

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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