RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Below the latency in the PassMark tests, ns

34 45

Around 24% lower latency
Higher memory bandwidth, mbps

10600 1900

Around 5.58% higher bandwidth

Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz no data
Ranking PassMark (The more the better)

1682 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns