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Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

Overall score
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Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Overall score
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Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Differences Specifications Comments

Differences

Micron Technology 4ATF51264HZ-2G3B1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
  • Faster write speed, GB/s
    11.2 left arrow 10.2
    Average value in the tests
Micron Technology 4ATF51264HZ-2G3E1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G3E1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 35
    Around -30% lower latency

Specifications

Complete list of technical specifications
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 27
  • Read speed, GB/s
    14.8 left arrow 14.8
  • Write speed, GB/s
    11.2 left arrow 10.2
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2336 left arrow 2173

Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF51264HZ-2G3E1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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