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Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Compare
Micron Technology 4ATF51264HZ-2G6E1 4GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
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Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
38
Around -9% lower latency
Faster reading speed, GB/s
14.8
14.2
Average value in the tests
Faster write speed, GB/s
11.2
10.3
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
35
Read speed, GB/s
14.2
14.8
Write speed, GB/s
10.3
11.2
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2148
2336
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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