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Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
比较
Micron Technology 4ATF51264HZ-2G6E1 4GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
总分
Micron Technology 4ATF51264HZ-2G6E1 4GB
总分
Micron Technology 4ATF51264HZ-2G3B1 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
38
左右 -9% 更低的延时
更快的读取速度,GB/s
14.8
14.2
测试中的平均数值
更快的写入速度,GB/s
11.2
10.3
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
35
读取速度,GB/s
14.2
14.8
写入速度,GB/s
10.3
11.2
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2148
2336
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
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SK Hynix HMT41GU7BFR8A-PB 8GB
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Kingston 99U5584-004.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Kingston SMD4-S8G48HJ-26V 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905711-015.A00G 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
报告一个错误
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Bug description
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