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Micron Technology 8ATF51264AZ-2G1B1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Compare
Micron Technology 8ATF51264AZ-2G1B1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Overall score
Micron Technology 8ATF51264AZ-2G1B1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF51264AZ-2G1B1 4GB
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Faster reading speed, GB/s
15.8
13.8
Average value in the tests
Faster write speed, GB/s
11.8
10.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
29
Around -4% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF51264AZ-2G1B1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
28
Read speed, GB/s
15.8
13.8
Write speed, GB/s
11.8
10.4
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2711
2354
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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