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Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471B5773CHS-CH9 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs Samsung M471B5773CHS-CH9 2GB

Overall score
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Overall score
star star star star star
Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

Differences Specifications Comments

Differences

Micron Technology 8JSF25664HZ-1G4D1 2GB Reasons to consider
Micron Technology 8JSF25664HZ-1G4D1 2GB
Report a bug
  • Faster reading speed, GB/s
    10.7 left arrow 9.8
    Average value in the tests
  • Faster write speed, GB/s
    7.5 left arrow 6.7
    Average value in the tests
Samsung M471B5773CHS-CH9 2GB Reasons to consider
Samsung M471B5773CHS-CH9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 41
    Around -32% lower latency

Specifications

Complete list of technical specifications
Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471B5773CHS-CH9 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    41 left arrow 31
  • Read speed, GB/s
    10.7 left arrow 9.8
  • Write speed, GB/s
    7.5 left arrow 6.7
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1335 left arrow 1304

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM comparisons

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

Samsung M471B5773CHS-CH9 2GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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