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Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471B5773CHS-CH9 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs Samsung M471B5773CHS-CH9 2GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Punteggio complessivo
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Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 8JSF25664HZ-1G4D1 2GB Motivi da considerare
Micron Technology 8JSF25664HZ-1G4D1 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10.7 left arrow 9.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.5 left arrow 6.7
    Valore medio nei test
Samsung M471B5773CHS-CH9 2GB Motivi da considerare
Samsung M471B5773CHS-CH9 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    31 left arrow 41
    Intorno -32% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471B5773CHS-CH9 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    41 left arrow 31
  • Velocità di lettura, GB/s
    10.7 left arrow 9.8
  • Velocità di scrittura, GB/s
    7.5 left arrow 6.7
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1335 left arrow 1304

Micron Technology 8JSF25664HZ-1G4D1 2GB Confronto tra le RAM

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

Samsung M471B5773CHS-CH9 2GB Confronto tra le RAM

SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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