RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
14.8
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
54
Around -54% lower latency
Faster write speed, GB/s
11.2
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
35
Read speed, GB/s
3,573.5
14.8
Write speed, GB/s
1,308.1
11.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
371
2336
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1G44AB0-CWE 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905700-012.A00G 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA81GS6MFR8N-UH 8GB
Kingston KHX2800C14D4/8GX 8GB
Samsung M471A1G43EB1-CPB 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-2400C15-8GRB 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BL16G30C15U4B.16FE 16GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT16G4SFD8266 16GB
Report a bug
×
Bug description
Source link