RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
12.2
Average value in the tests
Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
71
Around -154% lower latency
Faster write speed, GB/s
9.3
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
28
Read speed, GB/s
2,831.6
12.2
Write speed, GB/s
1,322.6
9.3
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
399
2382
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5458-008.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F2-6400CL5-4GBPQ 4GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMX12GX3M3A1333C9 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMY16GX3M2A1866C 8GB
PNY Electronics PNY 2GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2400C14S4/4G 4GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Kingston K531R8-MIN 4GB
Corsair CMU64GX4M4D3000C16 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT51264BA160BJ.C8F 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
SK Hynix HYMP112U64CP8-S5 1GB
OCZ OCZ2SOE800URB1G 1GB
Report a bug
×
Bug description
Source link