RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M378A5143EB1-CPB 4GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M378A5143EB1-CPB 4GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Samsung M378A5143EB1-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
14.6
Average value in the tests
Reasons to consider
Samsung M378A5143EB1-CPB 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
71
Around -87% lower latency
Faster write speed, GB/s
10.8
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M378A5143EB1-CPB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
38
Read speed, GB/s
2,831.6
14.6
Write speed, GB/s
1,322.6
10.8
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
399
2298
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Samsung M378A5143EB1-CPB 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M378A5143EB1-CPB 4GB
Kingston KHX1600C9D3/4GX 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2400C16-4GFX 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9965596-035.B00G 4GB
Kingston ACR256X64D3S1333C9 2GB
Kingston K821PJ-MIB 16GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CMR16GX4M2D3200C16 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-16GVR 16GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
Samsung M393A1G40DB0-CPB 8GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Report a bug
×
Bug description
Source link