Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M378A5143EB1-CPB 4GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 14.6

测试中的平均数值

Samsung M378A5143EB1-CPB 4GB

需要考虑的原因
Samsung M378A5143EB1-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 71

左右 -87% 更低的延时
更快的写入速度，GB/s

10.8 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Samsung M378A5143EB1-CPB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 38
读取速度，GB/s

2,831.6 14.6
写入速度，GB/s

1,322.6 10.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

SK Hynix HMA82GU6DJR8N-WM 16GB

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Samsung 1600 CL10 Series 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-3200C16-32GTZN 32GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905630-025.A00G 8GB

Kingston 9905630-025.A00G 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-2400C15-8GRB 8GB

G Skill Intl F4-2400C15-8GRB 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB