RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A4G43BB1-CWE 32GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M471A4G43BB1-CWE 32GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Samsung M471A4G43BB1-CWE 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
15
Average value in the tests
Reasons to consider
Samsung M471A4G43BB1-CWE 32GB
Report a bug
Below the latency in the PassMark tests, ns
70
71
Around -1% lower latency
Faster write speed, GB/s
14.3
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A4G43BB1-CWE 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
70
Read speed, GB/s
2,831.6
15.0
Write speed, GB/s
1,322.6
14.3
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
399
2519
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Samsung M471A4G43BB1-CWE 32GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Kingston 9965589-013.A00G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A4G43BB1-CWE 32GB
SK Hynix HMT351U6CFR8C-H9 4GB
A-DATA Technology AX4S2800316G18-B 16GB
Peak Electronics 256X64M-67E 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMU64GX4M4A2666C16 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMK32GX4M4B3333C16 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Team Group Inc. DDR4 2666 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CB8GU2666.C8ET 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMW16GX4M2K4266C19 8GB
Kingston 9905403-011.A03LF 2GB
Kingston 9965662-002.A01G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Report a bug
×
Bug description
Source link