RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
25
Around -9% lower latency
Faster reading speed, GB/s
17
16.1
Average value in the tests
Faster write speed, GB/s
12.9
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
23
Read speed, GB/s
16.1
17.0
Write speed, GB/s
10.1
12.9
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2938
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB RAM comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
Panram International Corporation PUD42400C154G2NJW 4GB
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2400C15-8GRK 8GB
Crucial Technology CT102464BF160B.16F 8GB
A-DATA Technology DDR4 2800 2OZ 4GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Apacer Technology 78.B1GM3.AF00B 4GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMH16GX4M2Z3200C16 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3466C16-8GTZ 8GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Avant Technology F641GU67F9333G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M2Z3600C20 8GB
Report a bug
×
Bug description
Source link