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Samsung 1600 CL10 Series 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Samsung 1600 CL10 Series 8GB vs Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 30
    Around 17% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 11.2
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 7.9
    Average value in the tests
Micron Technology 18ASF1G72PDZ-2G6B1 8GB Reasons to consider
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 30
  • Read speed, GB/s
    16.1 left arrow 11.2
  • Write speed, GB/s
    10.1 left arrow 7.9
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2266

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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