RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C14-32GTRS 32GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
G Skill Intl F4-3200C14-32GTRS 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
24.1
Average value in the tests
Faster write speed, GB/s
2,622.0
16.6
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C14-32GTRS 32GB
Report a bug
Below the latency in the PassMark tests, ns
32
77
Around -141% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
32
Read speed, GB/s
3,405.2
24.1
Write speed, GB/s
2,622.0
16.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
4001
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
G Skill Intl F4-3200C14-32GTRS 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2800C15-8GTXG 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston HP26D4U9D8ME-16X 16GB
PNY Electronics PNY 2GB
Golden Empire CL19-25-25 D4-4000 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
Kingston KP223C-ELD 2GB
Crucial Technology BL4G24C16U4B.8FE 4GB
A-DATA Technology DDR3 1333G 2GB
AMD R748G2133U2S 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2400C15-8GFX 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Panram International Corporation W4N2666PS-8G 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston CBD24D4S7D8ME-16 16GB
Kingston ACR256X64D3S1333C9 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Report a bug
×
Bug description
Source link