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Samsung M3 93T5750CZA-CE6 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

Overall score
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 20.6
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 14.7
    Average value in the tests
Lexar Co Limited LD4BU008G-H3200ULH 8GB Reasons to consider
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 77
    Around -141% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 32
  • Read speed, GB/s
    3,405.2 left arrow 20.6
  • Write speed, GB/s
    2,622.0 left arrow 14.7
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 3393

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB RAM comparisons

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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