Samsung M3 93T5750CZA-CE6 2GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.7

测试中的平均数值

Lexar Co Limited LD4BU008G-H3200ULH 8GB

需要考虑的原因
Lexar Co Limited LD4BU008G-H3200ULH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

3,405.2 20.6
写入速度，GB/s

2,622.0 14.7
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

763 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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