RAM comparison Samsung M323R2GA3BB0-CQKOD 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Overall score

Samsung M323R2GA3BB0-CQKOD 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB

Faster reading speed, GB/s

13.4 12.7

Average value in the tests
Faster write speed, GB/s

12.1 6.3

Average value in the tests
Higher memory bandwidth, mbps

19200 17000

Around 1.13% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Complete list of technical specifications

Samsung M323R2GA3BB0-CQKOD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Main characteristics

Other

Description

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

3419 2256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns