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Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
Reasons to consider
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
36
Around -71% lower latency
Faster reading speed, GB/s
17.6
15
Average value in the tests
Faster write speed, GB/s
12.2
10.3
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
21
Read speed, GB/s
15.0
17.6
Write speed, GB/s
10.3
12.2
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2569
3126
Samsung M378A1G43DB0-CPB 8GB RAM comparisons
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Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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